N-FET,15/21V,Idss=30mA,Up=(0.07-6)V,200mW,TO-18,КП350Б Russia

N-FET,15/21V,Idss=30mA,Up=(0.07-6)V,200mW,TO-18,КП350Б Russia Структура N-FET Максимальное напряжени..

4.80 лв.

N-FET,20V,Idss=(18-43)mA,Up=7V,TO-18,Russia КП302Б

N-FET,20V,Idss=(18-43)mA,Up=7V,TO-18,Russia КП302Б SMP 6453,TMPF 6453,TP 6453..

6.00 лв.

N-FET,20V,Idss=(3-12)mA,Up=8V,TO-18,Russia КП303А

N-FET,20V,Idss=(3-12)mA,Up=8V,TO-18,Russia КП303А2N 5485,KK 4381..

4.80 лв.

N-FET,25V,Idss=(0.3-3)mA,Up=(0.3-3)V,TO-18,Russia КП303Е

N-FET,25V,Idss=(0.3-3)mA,Up=(0.3-3)V,TO-18,Russia КП303ЕМодел: KП303EТип: N-каналенНапрежение на про..

4.80 лв.

N-FET,25V,Idss=(0.5-2.5)mA,Up=(0.5-3)V,TO-18,Russia КП303А

N-FET,25V,Idss=(0.5-2.5)mA,Up=(0.5-3)V,TO-18,Russia КП303АField Effect Transistor D110-1;TO-18,Russi..

4.80 лв.

N-FET,25V,Idss=(0.5-2.5)mA,Up=(0.5-3)V,TO-18,Russia КП303Б

N-FET,25V,Idss=(0.5-2.5)mA,Up=(0.5-3)V,TO-18,Russia КП303Б2N4392Модел: КП303БТип: Si PN P-ChannelMа..

6.00 лв.

NF-E,±22V,3.5A,,20W,(±18V/4om),14-QIP+c

NF-E,±22V,3.5A,,20W,(±18V/4om),14-QIP+c..

OP-IC ,2xChannel, DIP-14 ,Russia К157УД2

OP-IC ,2xChannel, DIP-14 ,Russia К157УД2DIP-14 ,Russia К157УД2Няма възможност за доставка към момент..

OP-IC ,Uni,Serie 101,±22V,14-DIP ,Russia К553УД2

OP-IC ,Uni,Serie 101,±22V,14-DIP ,Russia К553УД2LM 301N,1УО 101,ULY 7701NНяма възможност за доставка..

OP-IC,Vcc ± 6.3V ,,-60..+125°C ,8-DIP Russia К140УД708

OP-IC,Vcc ± 6.3V ,,-60..+125°C ,8-DIP Russia К140УД708 8-DIP Russia К140УД708..

P-FET,10V,Idss=(0.8-1.8)mA,Up=10V,38mW ,KT-1-7,TO-92 ,Russia КП103K

P-FET,10V,Idss=(0.8-1.8)mA,Up=10V,38mW ,KT-1-7,TO-92 ,Russia КП103KJFET transistor KT-1-7,TO-92 ,Rus..

P-FET,12-17V,Idss=(1.8-6.6)mA,Up=10V,TO-18,Russia КП103П/Л

P-FET,12-17V,Idss=(1.8-6.6)mA,Up=10V,TO-18,Russia КП103П/Л..

4.80 лв.

Si-D ,GL,1200V,50A,500Hz,d35.5x80mm,M20x1.5/15mm,с въженце+каб.обувка ,Russia В50-12

Si-D ,GL,1200V,50A,500Hz,d35.5x80mm,M20x1.5/15mm,с въженце+каб.обувка ,Russia В50-12Russia В50-12 1..

24.00 лв.

Si-Di ,100V,10A,0.0011MHz,M8x12mm ,Russia Д242А

Si-Di ,100V,10A,0.0011MHz,M8x12mm ,Russia Д242АИзправителен диод модел Д242А, максимално обратно нап..

3.00 лв.

Si-Di, 50V,100mA,20kHz, 4uS,d3x3.2mm, Жълта Точка на Анода,Russia КД103Б

Si-Di, 50V,100mA,20kHz, 4uS,d3x3.2mm, Жълта Точка на Анода,Russia КД103БSi-Di, 50V,100mA,20kHz, 4uS,..

0.30 лв.