N-FET,25V,Idss=(0.5-2.5)mA,Up=(0.5-3)V,TO-18,Russia КП303Б

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NF-E,±22V,3.5A,,20W,(±18V/4om),14-QIP+c

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OP-IC ,2xChannel, DIP-14 ,Russia К157УД2

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OP-IC,Vcc ± 6.3V ,,-60..+125°C ,8-DIP Russia К140УД708

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P-FET,10V,Idss=(0.8-1.8)mA,Up=10V,38mW ,KT-1-7,TO-92 ,Russia КП103K

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P-FET,12-17V,Idss=(1.8-6.6)mA,Up=10V,TO-18,Russia КП103П/Л

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Si-D ,GL,1200V,50A,500Hz,d35.5x80mm,M20x1.5/15mm,с въженце+каб.обувка ,Russia В50-12

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Si-Di, 50V,100mA,20kHz, 4uS,d3x3.2mm, Жълта Точка на Анода,Russia КД103Б

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Si-Diode,200V,5A,0.0012MHz,M5

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Si-Diode,600V,5A,0.0012MHz,TO-48,M5

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Si-N ,35V,0.1A,0.15W,250MHz,B=50..250 ,KT-13 ,Russia КТ315Г

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Si-N ,50V,0.1A,0.3W,100MHz,B=200..500,TO-72, Russia КТ3102Б

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Si-N ,Uni,100V,0.15A,0.35W,5MHz,TO-92 ,Russia КТ503Е

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Si-N ,Uni,60V,0.15A,0.35W,5MHz,TO-92 ,Russia КТ503Г

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