MOS-N-FET,HEXFET,Power MOSFET,55V,56A,110W,<0.0118om(42A),TO-252/D-Pak,code:FR2405 Infineon
IRFR2405PBF TO-252AA Infineon
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 56 A
Rds On - Drain-Source Resistance: 16 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 70 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 110 W
Channel Mode: Enhancement
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon / IR
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 550 mg