MOS-N-FET,100V, 130A, 370W,<4.5mOm(75A), 150nS, TO-220,IRFB4110PBF Infineon (IRF) IRFB4110PBF,code: FB4110
Infineon Technologies IRFB4110PBF MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 180 A
Rds On - Drain-Source Resistance: 3.7 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 150 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 370 W
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Width: 4.4 mm
Part # Aliases: IRFB4110PBF SP001570598
Unit Weight: 2 g