Каталожен номер: 171836
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MOS-N-FET,150V,60A,320W,<0.032om(35A),60nS,TO-220,IRFB52N15DPBF Infineon (IRF),code:FB52N15D
IInfineon (IRF) IRFB59N10DPBF MOSFET,N TO-220 100V 59A
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 150 V
Id - Continuous Drain Current: 60 A
Rds On - Drain-Source Resistance: 32 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Qg - Gate Charge: 60 nC
Pd - Power Dissipation: 320 W
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon / IR
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 2 g
IInfineon (IRF) IRFB59N10DPBF MOSFET,N TO-220 100V 59A
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 150 V
Id - Continuous Drain Current: 60 A
Rds On - Drain-Source Resistance: 32 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Qg - Gate Charge: 60 nC
Pd - Power Dissipation: 320 W
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Transistor Type: 1 N-Channel
Width: 4.4 mm
Brand: Infineon / IR
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 2 g
MOS-N-FET,150V,60A,320W,<0.032om(35A),60nS,TO-220,IRFB52N15DPBF Infineon (IRF),code:FB52N15D
- Фабричен номер: IRFB 52N15 D
- Производител IR
- Наличност: На склад
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9.60 лв.