MOS-N-FET,30V,62A,65W,< 8.7 mOm(45A),TO-220, IR-Infineon IRLB8721PBF
IR-Infineon IRLB8721PBF MOSFET Transistor, N Channel, 62A, 30V, 9 mohm, TO-220
Manufacturer: Infineon
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 62 A
Rds On - Drain-Source Resistance: 8.7 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 7.6 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 65 W
Channel Mode: Enhancement
Tradename: HEXFET
Brand: Infineon Technologies
Configuration: Single
Fall Time: 17 ns
Forward Transconductance - Min: 35 S
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFETs
Rise Time: 93 ns
Series: N-Channel
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 9 ns
Typical Turn-On Delay Time: 9.1 ns
Width: 4.4 mm
Unit Weight: 2 g