MOS-N-FET,400V,10A,147W,<0.6om(5.7A),18nS,TO-220,P10N40D Texas Instruments,SIHP10N40D-GE3 SIHP10N40D-GE3,MOSFET 400V Vds 30V Vgs TO-220AB,P10N40D Vishay Manufacturer: Vishay Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package/Case: TO-220AB-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 400 V Id - Continuous Drain Current: 10 A Rds On - Drain-Source Resistance: 600 mOhms Vgs th - Gate-Source Threshold Voltage: 5 V Vgs - Gate-Source Voltage: 30 V Qg - Gate Charge: 15 nC Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Configuration: Single Pd - Power Dissipation: 147 W Channel Mode: Enhancement Tradename: TrenchFET Brand: Vishay / Siliconix Fall Time: 14 ns Product Type: MOSFET Rise Time: 18 ns Subcategory: MOSFETs Typical Turn-Off Delay Time: 18 ns Typical Turn-On Delay Time: 12 ns Unit Weight: 6 g