MOS-N-FET,50V,13.5A,40W,<125mom(7.5A),9.5/10.5uS,TO-220,BUK100-50GL Philips Metal oxide N-channel FET, enhancement types,=BUK 100-50DL: 9,5/10,5µs Manufacturer: NXP Product Category: MOSFET RoHS: RoHS Compliant Details Brand: NXP Semiconductors Mounting Style: Through Hole Package / Case: TO-220-3 Number of Channels: 1 Channel Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 50 V Id - Continuous Drain Current: 13.5 A Rds On - Drain-Source Resistance: 125 mOhms Maximum Operating Temperature: + 150 C Channel Mode: Enhancement Configuration: Single Fall Time: 4.5 ns, 0.5 ns Minimum Operating Temperature: - 55 C Pd - Power Dissipation: 40 W Rise Time: 8 ns, 1 ns Factory Pack Quantity: 50 Transistor Type: 1 N-Channel Typical Turn-Off Delay Time:6 ns, 10 ns Typical Turn-On Delay Time:1.5 ns Part # Aliases:BUK100-50GL,127