MOS-N-FET,55V,110A,170W,<6.5mom(59A),TO-220,Infineon (IRF) IRF3205ZPBF
Manufacturer: Infineon
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 110 A
Rds On - Drain-Source Resistance: 6.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 76 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 170 W
Channel Mode: Enhancement
Brand: Infineon Technologies
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFETs
Subcategory: Transistors
Transistor Type: 1 N-Channel
Width: 4.4 mm
Unit Weight: 2 g