MOS-N-FET,600V,15.8A,40W,<0.16om(6A),TO-220F,code: K16A60W Toshiba TK16A60W
Transistor TK16A60W Toshiba,N Channel MOSFET, 600V, 15.8A, 40W, RDS(ON)=0.16Ohm
9965-900-09534 Philips
Manufacturer: Toshiba
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220FP-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 15.8 A
Rds On - Drain-Source Resistance: 160 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3.7 V
Qg - Gate Charge: 38 nC
Minimum Operating Temperature: -
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 40 W
Channel Mode: Enhancement
Tradename: DTMOSIV
Series: TK16A60W
Brand: Toshiba
Configuration: Single
Fall Time: 5 ns
Height: 15 mm
Length: 10 mm
Product Type: MOSFET
Rise Time: 25 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 100 ns
Typical Turn-On Delay Time: 50 ns
Width: 4.5 mm
Unit Weight: 2 g