MOS-N-FET,600V,20A,45W,86nS<0.165om(6A),TO-220F,Toshiba K20A60W,K20A60U
Transistor TK20N60W Toshiba,N Channel MOSFET, 600V, 20, 45W, RDS(ON)=0.165Ohm 9965-900-20266 Philips
Product Category: MOSFET
Manufacturer: Toshiba
RoHS: RoHS Compliant Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220FP-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 20 A
Rds On - Drain-Source Resistance: 150 mOhms
Vgs - Gate-Source Voltage: 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V to 4.5 V
Qg - Gate Charge: 55 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Channel Mode: Enhancement
Tradename: DTMOSIV
Brand: Toshiba
Configuration: Single
Height: 15 mm
Length: 10 mm
Pd - Power Dissipation: 45 W
Series: TK20A60W
Factory Pack Quantity: 50
Transistor Type: 1 N-Channel
Width: 4.5 mm
Unit Weight: 6 g