Каталожен номер: 67044
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MOS-N-FET,800V,4A,35W,<3.3om(2A),TO-220F, STM STP4NB80FP
STP4NB80FP,STP4NA60FI ,STP4NK80ZFP
STP4NB80FP,STP4NA60FI ,STP4NK80ZFP
Mesh Overlay Power Amplifier, 800V 4A 35W
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 4 A
Rds On - Drain-Source Resistance: 3.3 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 35 W
Channel Mode: Enhancement
Configuration: Single
Height: 9.15 mm
Length: 10.4 mm
Series: STP4NB80F
Transistor Type: 1 N-Channel
Width: 4.6 mm
Brand: STMicroelectronics
Fall Time: 9 ns
Product Type: MOSFET
Rise Time: 8 ns
Typical Turn-On Delay Time: 14 ns
Unit Weight: 330 mg
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 4 A
Rds On - Drain-Source Resistance: 3.3 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 35 W
Channel Mode: Enhancement
Configuration: Single
Height: 9.15 mm
Length: 10.4 mm
Series: STP4NB80F
Transistor Type: 1 N-Channel
Width: 4.6 mm
Brand: STMicroelectronics
Fall Time: 9 ns
Product Type: MOSFET
Rise Time: 8 ns
Typical Turn-On Delay Time: 14 ns
Unit Weight: 330 mg
MOS-N-FET,800V,4A,35W,<3.3om(2A),TO-220F, STM STP4NB80FP
- Фабричен номер: STP 4NB80 FP
- Производител STM
- Наличност: На склад
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5.40 лв.