MOS-N-FET-e,100V,55A,155W,<26 mOm(27.5A),75nS ,TO-220, FQP55N10 Fairchild
Fairchild,QFET,MOSFET, 100 V, 55 A, 26 mΩ SMPS,FQP55N10
Manufacturer: Onsemi  /Fairchild
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 55 A
Rds On - Drain-Source Resistance: 26 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 98 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 155 W
Channel Mode: Enhancement
Tradename: QFET
Brand: onsemi / Fairchild
Configuration: Single
Fall Time: 140 ns
Forward Transconductance - Min: 38 S
Height: 16.3 mm
Length: 10.67 mm
Product Type: MOSFET
Rise Time: 250 ns
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 110 ns
Typical Turn-On Delay Time: 25 ns
Width: 4.7 mm
Part # Aliases: FQP55N10_NL
Unit Weight: 2 g