MOS-N-FET-e, 600V, 5.5A,125W,< 2 om(2.8A),16nS ,TO-220 , FQP6N60C Fairchild
Fairchild,QFET,MOSFET, DMOS, SMPS,FQP6N60C
Manufacturer: onsemi
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 5.5 A
Rds On - Drain-Source Resistance: 2 Ohms
Vgs - Gate-Source Voltage: - 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 16 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Channel Mode: Enhancement
Brand: onsemi
Configuration: Single
Fall Time: 45 ns
Forward Transconductance - Min: 4.8 S
Product Type: MOSFETs
Rise Time: 45 ns
Series: FQP6N60C
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 15 ns
Part # Aliases: FQP6N60C_NL
Unit Weight: 2 g