MOS-N-FET-e,60V,55A,133W,<26 mOm (27.5A),75nS ,TO-220, FQP55N06 Fairchild
Mos Fet Transistor TO-220, FQP55N06 Fairchild
Manufacturer: onsemi
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 55 A
Rds On - Drain-Source Resistance: 20 mOhms
Vgs - Gate-Source Voltage: - 25 V, 25 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 133 W
Channel Mode: Enhancement
Brand: onsemi
Configuration: Single
Fall Time: 75 ns
Product Type: MOSFETs
Rise Time: 130 ns
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 60 ns
Typical Turn-On Delay Time: 15 ns
Unit Weight: 2 g