MOS-N-FET,L,600V,2.6A,36W,<2.2om(2A),TO-220F,FQPF4N60 Fairchild
Manufacturer: ON Semiconductor
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 2.6 A
Rds On - Drain-Source Resistance: 2.2 Ohms
Vgs - Gate-Source Voltage: 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 36 W
Channel Mode: Enhancement
Height: 16.3 mm
Length: 10.67 mm
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance - Min: 3.1 S
Fall Time: 35 ns
Product Type: MOSFET
Rise Time: 45 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 25 ns
Typical Turn-On Delay Time: 13 ns
Unit Weight: 2,125 g