MOS-N-FET ,LogL,40V,557A,416W,<500uoHm, 307nS,-55..+175°C ,SMD- D2-Pak ,Infineon Technologies IRL40SC228
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: D2PAK-7
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 557 A
Rds On - Drain-Source Resistance: 500 uOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 307 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 416 W
Channel Mode: Enhancement
Tradename: StrongIRFET
Brand: Infineon Technologies
Configuration: Single
Fall Time: 176 ns
Forward Transconductance - Min: 264 S
Product Type: MOSFET
Rise Time: 210 ns
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 222 ns
Typical Turn-On Delay Time: 67 ns
Unit Weight: 4,675 g