MOS-N-FET,60V, 30A,55W,0.22mOm ,TO-252(D-Pak,D30NE06L ST Microelectronics
MOS-N-FET,60V, 30A,55W,0.22mOm ,TO-252(D-Pak,D30NE06L ST Microelectronics ,HK8530 HUA
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 30 A
Rds On - Drain-Source Resistance: 22 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 55 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 45 ns
Forward Transconductance - Min: 25 S
Height: 2.4 mm
Length: 6.6 mm
Product Type: MOSFET
Rise Time: 100 ns
Series: STD30NE06L
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-On Delay Time: 27 ns
Width: 6.2 mm
Unit Weight: 330 mg