Каталожен номер: 163254
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MOSFET-N Channel,30V,86A,79W,<0.065om(7.9A),TO-252(D-Pak),code:FR3709Z ,IRFR3709ZTRLPBF Infineon
INFINEON IRFR5505PBF MOSFET Transistor, P Channel, -18 A, -55 V, 110 mohm, -10 V, -4 V
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 86 A
Rds On - Drain-Source Resistance: 6.5 mOhms
Vgs th - Gate-Source Threshold Voltage: 2.25 V
Qg - Gate Charge: 26 nC
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd - Power Dissipation: 79 W
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon Technologies
Forward Transconductance - Min: 51 S
Fall Time: 3.9 ns
Product Type: MOSFET
Rise Time: 12 ns
Subcategory: MOSFETs
Unit Weight: 4 g
INFINEON IRFR5505PBF MOSFET Transistor, P Channel, -18 A, -55 V, 110 mohm, -10 V, -4 V
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 86 A
Rds On - Drain-Source Resistance: 6.5 mOhms
Vgs th - Gate-Source Threshold Voltage: 2.25 V
Qg - Gate Charge: 26 nC
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd - Power Dissipation: 79 W
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 N-Channel
Width: 6.22 mm
Brand: Infineon Technologies
Forward Transconductance - Min: 51 S
Fall Time: 3.9 ns
Product Type: MOSFET
Rise Time: 12 ns
Subcategory: MOSFETs
Unit Weight: 4 g
MOSFET-N Channel,30V,86A,79W,<0.065om(7.9A),TO-252(D-Pak),code:FR3709Z ,IRFR3709ZTRLPBF Infineon
- Фабричен номер: IRFR 3709 Z
- Производител Infineon
- Наличност: На склад
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3.60 лв.