MOSFET,N-Channel,900V,9A,280W,<1.4om(5A),58nS,TO-247/TO-3P,ON Semiconductor / Fairchild FQA9N90C-F109
ON Semiconductor / Fairchild FQA9N90C-F109 MOSFET 900V N-Channel QFET
Manufacturer: ON Semiconductor
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PN-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 900 V
Id - Continuous Drain Current: 9 A
Rds On - Drain-Source Resistance: 1.4 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 58 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 280 W
Channel Mode: Enhancement
Tradename: QFET
Configuration: Single
Height: 20.1 mm
Length: 16.2 mm
Series: FQA9N90C_F109
Transistor Type: 1 N-Channel
Width: 5 mm
Brand: ON Semiconductor / Fairchild
Fall Time: 75 ns
Product Type: MOSFET
Rise Time: 120 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 100 ns
Typical Turn-On Delay Time: 50 ns
Part # Aliases: FQA9N90C_F109
Unit Weight: 4,600 g