N-Chan.MOS-FET,MDmeshII,600V,11A,25W,<0.28om(28A),230/290nS,TO-220F,code:13NM60N ,STF13NM60N STMicroelectronics
STF13NM60N TRANSISTOR STM,BN81-04768A,13NM60N A/S-MOSFET:SD14N60,QP801S, QP802S , IPA60R400CEXKSA1 Infineon
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 11 A
Rds On - Drain-Source Resistance: 360 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 27 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 25 W
Channel Mode: Enhancement
Tradename: MDmesh
Brand: STMicroelectronics
Configuration: Single
Fall Time: 10 ns
Product Type: MOSFET
Rise Time: 8 ns
Series: STF13NM60N
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 30 ns
Typical Turn-On Delay Time: 3 ns
Unit Weight: 2 g