P-Channel,MOSFET,40V,100A,107W,<0.0051om(20A),100/280nS,TO-252/DPak ,Vishay SQD40061EL_GE3
Automotive P-Channel 40 V (D-S) 175 °C MOSFET ,Vishay SQD40061EL_GE3 MOSFET -40V Vds 20V Vgs DPAK (TO-252) 
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 40 V
Id - Continuous Drain Current: 100 A
Rds On - Drain-Source Resistance: 7.1 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 280 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 107 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SQ
Brand: Vishay / Siliconix
Configuration: Single
Fall Time: 160 ns
Forward Transconductance - Min: 103 S
Product Type: MOSFET
Rise Time: 180 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 145 ns
Typical Turn-On Delay Time: 15 ns
Unit Weight: 330 mg