N-Channel,QFET-DMOS,800V,5.5A,51W,<1.2om(1.8A),TO-220F,FQPF6N80C Fairchild
Transistor FQPF6N80C Fairchild
Product Category: MOSFET
Manufacturer: ON Semiconductor
RoHS: RoHS Compliant By Exemption Details
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220FP-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 5.5 A
Rds On - Drain-Source Resistance: 2.5 Ohms
Vgs - Gate-Source Voltage: 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Tradename: QFET
Brand: ON Semiconductor / Fairchild
Configuration: Single
Fall Time: 44 ns
Forward Transconductance - Min: 5.4 S
Height: 16.07 mm
Length: 10.36 mm
Pd - Power Dissipation: 51 W
Rise Time: 65 ns
Series: FQPF6N80C
Factory Pack Quantity: 50
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 47 ns
Typical Turn-On Delay Time: 26 ns
Width: 4.9 mm