Каталожен номер: 176939
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N-MOS-FET,HEXFET,V-MOS,Log-L,100V,17A,48W,<0.077om, TO-220F,Vishay Semiconductors IRFI540GPBF
Transistor IRFI540GPBF ,2SK1307, 2SK1318, 2SK1348, 2SK1432, ++
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 77 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 72 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 48 W
Channel Mode: Enhancement
Series: IRFI
Brand: Vishay Semiconductors
Configuration: Single
Height: 15.49 mm
Length: 10.41 mm
Product Type: MOSFET
Subcategory: MOSFETs
Width: 4.7 mm
Unit Weight: 2 g
Transistor IRFI540GPBF ,2SK1307, 2SK1318, 2SK1348, 2SK1432, ++
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 77 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 72 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 48 W
Channel Mode: Enhancement
Series: IRFI
Brand: Vishay Semiconductors
Configuration: Single
Height: 15.49 mm
Length: 10.41 mm
Product Type: MOSFET
Subcategory: MOSFETs
Width: 4.7 mm
Unit Weight: 2 g
N-MOS-FET,HEXFET,V-MOS,Log-L,100V,17A,48W,<0.077om, TO-220F,Vishay Semiconductors IRFI540GPBF
- Фабричен номер: IRFI 540 G
- Производител Vishay
- Наличност: На склад
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6.00 лв.