N-MOS-FET,25V,62A,58W,<0.0105om(31A),D2-Pak/TO-252,ON Semiconductor code:T60/N02RG,NTD60N02RT4G
Manufacturer: ON Semiconductor
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 25 V
Id - Continuous Drain Current: 62 A
Rds On - Drain-Source Resistance: 8.4 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.87 W
Channel Mode: Enhancement
Configuration: Single
Height: 2.38 mm
Length: 6.73 mm
Product: MOSFET Small Signal
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 6.22 mm
Brand: ON Semiconductor
Forward Transconductance - Min: 27 S
Fall Time: 33 ns
Product Type: MOSFET
Rise Time: 33 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 19 ns
Typical Turn-On Delay Time: 7 ns
Unit Weight: 330 mg