Каталожен номер: 176473
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N-MOS-FET,HEXFET,V-MOS,Log-L,100V,17A,48W,<0.44-0.77om,TO-220F ,Vishay Semiconductors IRLI540GPBF
Transistors IRLI540G ,2SK1266, 2SK1307, 2SK1348..49, 2SK1906++
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 77 mOhms
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 64 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 48 W
Channel Mode: Enhancement
Brand: Vishay Semiconductors
Configuration: Single
Height: 15.9 mm
Length: 10.5 mm
Product Type: MOSFET
Subcategory: MOSFETs
Width: 4.69 mm
Unit Weight: 2 g
Transistors IRLI540G ,2SK1266, 2SK1307, 2SK1348..49, 2SK1906++
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 17 A
Rds On - Drain-Source Resistance: 77 mOhms
Vgs - Gate-Source Voltage: - 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 64 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 48 W
Channel Mode: Enhancement
Brand: Vishay Semiconductors
Configuration: Single
Height: 15.9 mm
Length: 10.5 mm
Product Type: MOSFET
Subcategory: MOSFETs
Width: 4.69 mm
Unit Weight: 2 g
N-MOS-FET,HEXFET,V-MOS,Log-L,100V,17A,48W,<0.44-0.77om,TO-220F ,Vishay Semiconductors IRLI540GPBF
- Фабричен номер: IRLI 540 G
- Производител Vishay
- Наличност: На склад
-
6.00 лв.
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