V-MOS-N-FET,100V,85A,250W,<10,5mom(30A),TO-220,SUP85N10-10-E3 Vishay Semiconductors
SUP85N10-10-E3 MOSFET 100V N-CH 175 DEG.C
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 85 A
Rds On - Drain-Source Resistance: 8.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 160 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 250 W
Channel Mode: Enhancement
Tradename: TrenchFET
Packaging: Tube
Configuration: Single
Series: SUP
Transistor Type: 1 N-Channel
Brand: Vishay Semiconductors
Forward Transconductance - Min: 25 S
Fall Time: 130 ns
Product Type: MOSFET
Rise Time: 90 ns
Typical Turn-Off Delay Time: 55 ns
Typical Turn-On Delay Time: 12 ns
Unit Weight: 2 g