Каталожен номер: 22678
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MOS-N-FET,55V,49A,110W,<0.22om(25A),TO-220, IRFZ44NPBF Infineon / IR
;BUK 556/60; IRFZ44NPBF Infineon / IR MOSFET MOSFT 55V 49A 17.5mOhm 42nC
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 49 A
Rds On - Drain-Source Resistance: 23 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 42 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 83 W
Channel Mode: Enhancement
Brand: Infineon / IR
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Transistor Type: 1 N-Channel
Width: 4.4 mm
Part # Aliases: IRFZ44NPBF SP001565354
Unit Weight: 2 g
;BUK 556/60; IRFZ44NPBF Infineon / IR MOSFET MOSFT 55V 49A 17.5mOhm 42nC
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 49 A
Rds On - Drain-Source Resistance: 23 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1.8 V
Qg - Gate Charge: 42 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 83 W
Channel Mode: Enhancement
Brand: Infineon / IR
Configuration: Single
Height: 15.65 mm
Length: 10 mm
Product Type: MOSFET
Transistor Type: 1 N-Channel
Width: 4.4 mm
Part # Aliases: IRFZ44NPBF SP001565354
Unit Weight: 2 g
MOS-N-FET,55V,49A,110W,<0.22om(25A),TO-220, IRFZ44NPBF Infineon / IR
- Фабричен номер: IRFZ 44 N
- Производител IR
- Наличност: На склад
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2.40 лв.