Каталожен номер: 22582
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MOS-N-FET,600V,7.5A(25°C),48W,<1.2om(3.75A),TO-220F,FQPF8N60C Fairchild
Manufacturer: ON Semiconductor
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 7.5 A
Rds On - Drain-Source Resistance: 1.2 Ohms
Vgs - Gate-Source Voltage: 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 48 W
Channel Mode: Enhancement
Height: 16.3 mm
Length: 10.67 mm
Series: FQPF8N60C
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance - Min: 8.7 S
Fall Time: 64.5 ns
Rise Time: 60.5 ns
Typical Turn-Off Delay Time: 81 ns
Typical Turn-On Delay Time: 16.5 ns
Part # Aliases: FQPF8N60C_NL
Unit Weight: 2,270 g
Manufacturer: ON Semiconductor
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 7.5 A
Rds On - Drain-Source Resistance: 1.2 Ohms
Vgs - Gate-Source Voltage: 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 48 W
Channel Mode: Enhancement
Height: 16.3 mm
Length: 10.67 mm
Series: FQPF8N60C
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance - Min: 8.7 S
Fall Time: 64.5 ns
Rise Time: 60.5 ns
Typical Turn-Off Delay Time: 81 ns
Typical Turn-On Delay Time: 16.5 ns
Part # Aliases: FQPF8N60C_NL
Unit Weight: 2,270 g
MOS-N-FET,600V,7.5A(25°C),48W,<1.2om(3.75A),TO-220F,FQPF8N60C Fairchild
- Фабричен номер: FQPF 8N60 C
- Производител Fairchild
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
-
4.20 лв.
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