Каталожен номер: 171305

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V-MOS-N-FET,900V,9.2A,200W,<0.98om(1.75A),95nS,TO-247S,STW11NK90Z STMicroelectronics
STW11NK90Z STMicroelectronics MOSFET N Ch 900V Zener Supe rMESH 9.2A
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 900 V
Id - Continuous Drain Current: 9.2 A
Rds On - Drain-Source Resistance: 980 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 95 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 200 W
Channel Mode: Enhancement
Tradename: SuperMESH
Configuration: Single
Height: 20.15 mm
Length: 15.75 mm
Series: STW11NK90Z
Transistor Type: 1 N-Channel
Width: 5.15 mm
Brand: STMicroelectronics
Fall Time: 50 ns
Product Type: MOSFET
Rise Time: 19 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 76 ns
Typical Turn-On Delay Time: 30 ns
Unit Weight: 6 g