Каталожен номер: 169100
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V-MOS-N-FET,250V,44A,310W,<0.046om(28A),TO-247AC,IRFP4229PBF Infineon Manufacturer: Infineon Product Category: MOSFET Technology: Si Package/Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 250 V Id - Continuous Drain Current: 44 A Rds On - Drain-Source Resistance: 46 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: 1.8 V Qg - Gate Charge: 72 nC Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 310 W Channel Mode: Enhancement Configuration: Single Height: 20.7 mm Length: 15.87 mm Transistor Type: 1 N-Channel Width: 5.31 mm Brand: Infineon / IR Forward Transconductance - Min: 83 S Fall Time: 19 ns Product Type: MOSFET Rise Time: 27 ns Factory Pack Quantity: 400 Subcategory: MOSFETs Typical Turn-Off Delay Time: 44 ns Typical Turn-On Delay Time: 25 ns Part # Aliases: IRFP4229PBF SP001578046 Unit Weight: 38 g
V-MOS-N-FET,250V,44A,310W,<0.046om(28A),TO-247AC,IRFP4229PBF Infineon
- Фабричен номер: IRFP 4229
- Производител Infineon
- Наличност: На склад
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12.00 лв.
Свързани продукти
Фабричен номер: : IRFP 264 N
V-MOS-N-FET,250V,44A,380W,<0.060om(28A),TO-247AC,IRFP264N IR,Vishay / Siliconix
V-MOS-N-FET,250V,44A,380W,..
19.20 лв.