V-MOS-N-FET,500V,10A,125W,<0.56om(3A),TO-247 ,Toshiba 2SK2601
DC−DC Converter, Relay Drive and Motor Drive Applications
2SK2601,2SK1488, 2SK1723, 2SK1745, 2SK1757, ++
Manufacturer: Toshiba
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-3PN-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 10 A
Rds On - Drain-Source Resistance: 1 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 125 W
Channel Mode: Enhancement
Configuration: Single
Height: 20 mm
Length: 15.5 mm
Series: 2SK2601
Transistor Type: 1 N-Channel
Width: 4.5 mm
Brand: Toshiba
Fall Time: 45 ns
Product Type: MOSFET
Rise Time: 30 ns
Subcategory: MOSFETs
Unit Weight: 4,600 g