TrenchN-MOS-FET ,Log-L,110A,55V,203W,0.062om,TO-220AB ,NXP BUK9508-55B Manufacturer: NXP Product Category: MOSFET Technology: Si Mounting Style: Through Hole Package/Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 55 V Id - Continuous Drain Current: 75 A Rds On - Drain-Source Resistance: 8 mOhms Vgs - Gate-Source Voltage: - 15 V, + 15 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 187 W Channel Mode: Enhancement Brand: NXP Semiconductors Configuration: Single Fall Time: 100 ns Height: 9.4 mm Length: 10.3 mm Product Type: MOSFET Rise Time: 120 ns Subcategory: MOSFETs Transistor Type: 1 N-Channel Typical Turn-Off Delay Time: 225 ns Typical Turn-On Delay Time: 45 ns Width: 4.5 mm Unit Weight: 2 g