Каталожен номер: 151278
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.-
IGBT-N chan,1200V,30A,192W,Tf=14nS,TO-247,code:30N120IHS ON Semi. NGTB30N120IHSW ON SEMICONDUCTOR NGTB30N120IHSWG IGBT, 1200V, 30A, TO-247-3 Manufacturer: ON Semiconductor Product Category: IGBT Transistors RoHS: Details Technology: Si Package/Case: TO-247 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 1200 V Collector-Emitter Saturation Voltage: 2 V Maximum Gate Emitter Voltage: 20 V Continuous Collector Current at 25 C: 60 A Pd - Power Dissipation: 192 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Series: NGTB30N120IHS Brand: ON Semiconductor Gate-Emitter Leakage Current: 100 nA Product Type: IGBT Transistors Factory Pack Quantity: 30 Subcategory: IGBTs Unit Weight: 6,500 g
IGBT-N chan,1200V,30A,192W,Tf=14nS,TO-247,code:30N120IHS ON Semi. NGTB30N120IHSW
- Фабричен номер: NGTB 30N120 IHSWG
- Производител ONS
- Само с доставка от 3 до 15 раб. дни в стандартните случаи.
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20.00 лв.
Свързани продукти
Фабричен номер: : IHW 30N120 R2
IGBT-N chan,reverse conduct.,1200V,30/60A(100/25°C),390W,Tf=33nS,TO-247, code:H30R1202 Infineon IHW30N120R5XKSA1
IGBT-N chan,reverse conduct.,1200V,30/60A(100/25°C),390W,Tf=33nS,TO-247, code:H30R1202 Infineon IHW3..
20.00 лв.