IGBT-N chan,reverse conduct.,1350V,60A,349W,Tf=263nS,TO-247,code:H30PR3, Infineon IHW30N135R3XKSA1
IHW30N135R3FKSA1,Infineon,Transistor:IGBT;1.35kV;30A;175W;TO247-3
Manufacturer: Infineon
Product Category: IGBT Transistors
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1350 V
Collector-Emitter Saturation Voltage: 1.65 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 349 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Series: RC
Packaging: Tube
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: IHW3N135R3XK SP000989496 IHW30N135R3FKSA1
Unit Weight: 6 g