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Каталожен номер: 22826
  • IGBT-N-ch MOSFET,600V,50A,200W,0.20uS,TO-3PLH,code:50J102 , GT50J102 Toshiba

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IGBT-N-ch MOSFET,600V,50A,200W,0.20uS,TO-3PLH,code:50J102 , GT50J102 Toshiba GT50J102 TRANSISTORS IGBT, 600V, TO-3P(LH) Toshiba Manufacturer: Toshiba Product Category: IGBT Transistors Technology: Si Package/Case: TO-3P(LH)-3 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Maximum Gate Emitter Voltage: 20 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Series: GT50J102 Brand: Toshiba Continuous Collector Current Ic Max: 50 A Height: 26 mm Length: 20.5 mm Product Type: IGBT Transistors Subcategory: IGBTs Width: 5.2 mm

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IGBT-N-ch MOSFET,600V,50A,200W,0.20uS,TO-3PLH,code:50J102 , GT50J102 Toshiba

  • Фабричен номер: GT 50J102
  • Производител Toshiba
  • Само с доставка от 3 до 15 раб. дни в стандартните случаи.

  • 78.00 лв.


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