IGBT-N chan,600V,10A,16A(25°C),75W,Tf=36-158nS,TO-220AC,10N60-Infineon Manufacturer: ON Semiconductor Product Category: IGBT Transistors RoHS: Details Technology: Si Package/Case: TO-220-3 Mounting Style: Through Hole Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.2 V Maximum Gate Emitter Voltage: +/- 20 V Continuous Collector Current at 25 C: 16 A Pd - Power Dissipation: 75 W Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Series: SGP10N60RUFD Packaging: Tube Continuous Collector Current Ic Max: 16 A Height: 9.4 mm Length: 10.1 mm Width: 4.7 mm Brand: ON Semiconductor / Fairchild Continuous Collector Current: 16 A Gate-Emitter Leakage Current: +/- 100 nA