Каталожен номер: 178598
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.-
IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-247 ,code: G30H603 , Infineon IGW30N60H3FKSA1
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V
Maximum Gate Emitter Voltage: - 20 V, 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 187 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Series: HighSpeed 3
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: SP000852242 IGW3N6H3XK IGW30N60H3FKSA1
Unit Weight: 6g
IGBT Transistors 600V 30A 187W TO-247/3 ,code: G30H603 , Infineon IGW30N60H3FKSA1
Manufacturer: Infineon
Product Category: IGBTs Manufacturer: Infineon
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V
Maximum Gate Emitter Voltage: - 20 V, 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 187 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Series: HighSpeed 3
Brand: Infineon Technologies
Gate-Emitter Leakage Current: 100 nA
Product Type: IGBT Transistors
Subcategory: IGBTs
Tradename: TRENCHSTOP
Part # Aliases: SP000852242 IGW3N6H3XK IGW30N60H3FKSA1
Unit Weight: 6g
IGBT-N chan,600V,60A,30A(100°C),187W,Tf=18-207nS, TO-247 ,code: G30H603 , Infineon IGW30N60H3FKSA1
- Фабричен номер: IGW 30N60 H3FKSA1
- Производител Infineon
- Наличност: На склад
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9.20€ / 17.99 лв.