Каталожен номер: 103859
Product Category: IGBT Transistors
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: SKW30N60
Brand: Infineon Technologies
Continuous Collector Current Ic Max: 41 A
Height: 20.95 mm
Length: 15.9 mm
Product Type: IGBT Transistors
Subcategory: IGBTs
Width: 5.3 mm
Part # Aliases: SKW30N60HSXK SP000013744 SKW30N60HSFKSA1
Unit Weight: 5 g
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.
IGBT-N chan+diode,NPT-tech.,600V,41A(25°C)/30A(100°C),250W,Tf=25nS,TO-247AC,code: K30N60HS-Infineon ,SKW30N60HS ,STGW40H60D
SKW30N60HS,TO247–3,marking:K30N60HS,High Speed IGBT in NPT-technology,Short circuit withstand time-10 μs,Designed for operation above 30 kHz
Manufacturer: Infineon SKW30N60HS,TO247–3,marking:K30N60HS,High Speed IGBT in NPT-technology,Short circuit withstand time-10 μs,Designed for operation above 30 kHz
Product Category: IGBT Transistors
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Maximum Gate Emitter Voltage: 20 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: SKW30N60
Brand: Infineon Technologies
Continuous Collector Current Ic Max: 41 A
Height: 20.95 mm
Length: 15.9 mm
Product Type: IGBT Transistors
Subcategory: IGBTs
Width: 5.3 mm
Part # Aliases: SKW30N60HSXK SP000013744 SKW30N60HSFKSA1
Unit Weight: 5 g
IGBT-N chan+diode,NPT-tech.,600V,41A(25°C)/30A(100°C),250W,Tf=25nS,TO-247AC,code: K30N60HS-Infineon ,SKW30N60HS
- Фабричен номер: SKW 30N60 HS
- Производител Infineon
- Наличност: На склад
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18.00 лв.