Поради голямото натоварване на онлайн магазина, заявки(покупки), които са постъпили в сайта през текущия ден и при налични количества на артикулите се обработват и изпращат към клиента в рамките на 3 до 6 работни дни.
Каталожен номер: 22850
  • MOS-N-FET,L,600V,60A(25°C),160W,40/103ns,TO-247AC,code: G4PC40S,IR/Infineon  IRG4PC40SPBF
  • Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
    Това обаче не променя техните основни свойства.

  • MOS-N-FET,L,600V,60A(25°C),160W,40/103ns,TO-247AC,code: G4PC40S,IR/Infineon  IRG4PC40SPBF
MOS-N-FET,L,600V,60A(25°C),160W,40/103ns,TO-247AC,code: G4PC40S,IR/Infineon IRG4PC40SPBF
code: G4PC40S,IR/Infineon IRG4PC40SPBF,GBT Transistors 600V DC-1 KHZ (STD) DISCRETE IGBT
Manufacturer: Infineon
Product Category: IGBT Transistors
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.5 V
Maximum Gate Emitter Voltage: 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 160 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Brand: Infineon / IR
Continuous Collector Current Ic Max: 60 A
Height: 20.3 mm
Length: 15.9 mm
Product Type: IGBT Transistors
Subcategory: IGBTs
Width: 5.3 mm
Unit Weight: 38 g

Напишете отзив

Моля влезете в профила или се регистрирайте, за да напишете отзив.

MOS-N-FET,L,600V,60A(25°C),160W,40/103ns,TO-247AC,code: G4PC40S,IR/Infineon IRG4PC40SPBF

  • Фабричен номер: IRG 4PC40 SPBF
  • Производител IR
  • Само с доставка от 3 до 15 раб. дни в стандартните случаи.
  • 24.00 лв.


Свързани продукти

MOS-N-FET,L,600V,40A(25°C),160W,8-40kHz,>200kHz in rezonant mode,TO-247AC,code:G4PC40U,IR/Infineon IRG4PC40UPBF
Фабричен номер: : IRG 4PC40 U

MOS-N-FET,L,600V,40A(25°C),160W,8-40kHz,>200kHz in rezonant mode,TO-247AC,code:G4PC40U,IR/Infineon IRG4PC40UPBF

MOS-N-FET,L,600V,40A(25°C),160W,8-40kHz,>200kHz in rezonant mode,TO-247AC,code:G4PC40U,IR/Infineon I..

20.00 лв.

MOS-N-FET ,L,600V,50A(25°C),202W,156/536ns,TO-247AC,Motorola MGW30N60
Фабричен номер: : MGW 30N60

MOS-N-FET ,L,600V,50A(25°C),202W,156/536ns,TO-247AC,Motorola MGW30N60

MOS-N-FET ,L,600V,50A(25°C),202W,156/536ns,TO-247AC,Motorola MGW30N60MGW30N60 TRANSISTORS ,BUP 604, ..

IGBT-N ch.,600V,55A(25°C),200W,90/177ns,TO-247AC,code: G4PC50W ,IR /Infineon IRG4PC50WPBF
Фабричен номер: : IRG 4PC50 W

IGBT-N ch.,600V,55A(25°C),200W,90/177ns,TO-247AC,code: G4PC50W ,IR /Infineon IRG4PC50WPBF

IGBT-N ch.,600V,55A(25°C),200W,90/177ns,TO-247AC,code: G4PC50W ,IR /Infineon IRG4PC50WPBFcode: G4PC5..

22.00 лв.

MOS-N-FET,L,600V,40A(25°C),160W,49/174ns,TO-247AC,code: G4PC40W,IR/Infineon IRG4PC40WPBF
Фабричен номер: : IRG 4PC40 W

MOS-N-FET,L,600V,40A(25°C),160W,49/174ns,TO-247AC,code: G4PC40W,IR/Infineon IRG4PC40WPBF

MOS-N-FET,L,600V,40A(25°C),160W,49/174ns,TO-247AC,code: G4PC40W,IR/Infineon IRG4PC40WPBF;BUP 604;GN ..

20.00 лв.

IGBT-N-ch MOSFET,1000V,50A,156W,0.10uS,TO-3PLH,code:50N322A ,GT50J101 Toshiba
Фабричен номер: : GT 50J101

IGBT-N-ch MOSFET,1000V,50A,156W,0.10uS,TO-3PLH,code:50N322A ,GT50J101 Toshiba

IGBT-N-ch MOSFET,1000V,50A,156W,0.10uS,TO-3PLH,code:50N322A ,GT50J101 ToshibaGT50J101 TRANSISTORS..

52.80 лв.

IGBT-N ch.,600V,30A(25°C),187W,90/177ns,TO-247AC,code: G30H603 ,IR /Infineon IGW30N60H3FKSA1
Фабричен номер: : IGW 30N60 H3

IGBT-N ch.,600V,30A(25°C),187W,90/177ns,TO-247AC,code: G30H603 ,IR /Infineon IGW30N60H3FKSA1

IGBT-N ch.,600V,30A(25°C),187W,90/177ns,TO-247AC,code: G30H603 ,IR /Infineon IGW30N60H3FKSA1code: G4..

20.00 лв.

IGBT-N-ch MOSFET,600V,50A,200W,0.20uS,TO-3PLH,code:50J102 , GT50J102 Toshiba
Фабричен номер: : GT 50J102

IGBT-N-ch MOSFET,600V,50A,200W,0.20uS,TO-3PLH,code:50J102 , GT50J102 Toshiba

IGBT-N-ch MOSFET,600V,50A,200W,0.20uS,TO-3PLH,code:50J102 , GT50J102 Toshiba GT50J102 TRANSISTORS IG..

78.00 лв.