Каталожен номер: 172797
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.-
MOS-N-FET,E-series ,600V,18A,30A(25°C),37W,Tf=32-63nS,TO-220F,code: F30N60E ,Vishay Siliconix SIHF30N60E-GE3
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK ,TO-220F,code: F30N60E ,Vishay Siliconix SiHF30N60E
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220FP-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 29 A
Rds On - Drain-Source Resistance: 125 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 2.8 V
Qg - Gate Charge: 85 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 37 W
Channel Mode: Enhancement
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 36 ns
Height: 15.49 mm
Length: 10.41 mm
Product Type: MOSFET
Rise Time: 32 ns
Series: E
Typical Turn-Off Delay Time: 63 ns
Typical Turn-On Delay Time: 19 ns
Width: 4.7 mm
Unit Weight: 2 g
MOSFET 600V Vds 30V Vgs TO-220 FULLPAK ,TO-220F,code: F30N60E ,Vishay Siliconix SiHF30N60E
Manufacturer: Vishay
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220FP-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 29 A
Rds On - Drain-Source Resistance: 125 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 2.8 V
Qg - Gate Charge: 85 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 37 W
Channel Mode: Enhancement
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 36 ns
Height: 15.49 mm
Length: 10.41 mm
Product Type: MOSFET
Rise Time: 32 ns
Series: E
Typical Turn-Off Delay Time: 63 ns
Typical Turn-On Delay Time: 19 ns
Width: 4.7 mm
Unit Weight: 2 g
MOS-N-FET,E-series ,600V,18A,30A(25°C),37W,Tf=32-63nS,TO-220F,code: F30N60E ,Vishay Siliconix SIHF30N60E-GE3
- Фабричен номер: SiHF 30N60 E
- Производител Vishay
- Наличност: На склад
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15.00 лв.
Свързани продукти
Фабричен номер: : FMV 30N60 S1
MOS-N-FET,E-series ,600V,19A,30A(25°C),90W,Tf=31-57nS,TO-220F,code: 30N60S1 ,Fuji Electric FMV30N60S1
MOS-N-FET,E-series ,600V,19A,30A(25°C),90W,Tf=31-57nS,TO-220F,code: 30N60S1 ,Fuji Electric FMV30N60S..
15.00 лв.