V-MOS,FET-P Channel,55V,31A,69W,<0.065om(7.9A),TO-252(D-Pak),code:FR5505,Infineon / IR IRFR5305TRPBF
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Vds - Drain-Source Breakdown Voltage: 55 V
Id - Continuous Drain Current: 31 A
Rds On - Drain-Source Resistance: 65 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 42 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 110 W
Channel Mode: Enhancement
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 P-Channel
Type: HEXFET Power MOSFET
Width: 6.22 mm
Brand: Infineon / IR
Forward Transconductance - Min: 8 S
Fall Time: 63 ns
Product Type: MOSFET
Rise Time: 66 ns
Factory Pack Quantity: 2000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 39 ns
Typical Turn-On Delay Time: 14 ns
Unit Weight: 4 g