Каталожен номер: 169729
Снимките на продуктите са с илюстративно предназначение и могат да се различават от действителния изглед на предмета.
Това обаче не променя техните основни свойства.-
V-MOS-FET-P Channel,100V,13A,66W,<0.205om(7.9A),TO-252(D-Pak),code:FR5410 ,Infineon / IR IRFR5410TRLPBF
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 13 A
Rds On - Drain-Source Resistance: 205 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.4 V
Qg - Gate Charge: 58 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 66 W
Channel Mode: Enhancement
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 P-Channel
Width: 6.22 mm
Brand: Infineon / IR
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 4 g
Manufacturer: Infineon
Product Category: MOSFET
Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 13 A
Rds On - Drain-Source Resistance: 205 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.4 V
Qg - Gate Charge: 58 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 66 W
Channel Mode: Enhancement
Configuration: Single
Height: 2.3 mm
Length: 6.5 mm
Transistor Type: 1 P-Channel
Width: 6.22 mm
Brand: Infineon / IR
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 4 g
V-MOS-FET-P Channel,100V,13A,66W,<0.205om(7.9A),TO-252(D-Pak),code:FR5410 ,Infineon / IR IRFR5410TRLPBF
- Фабричен номер: IRFR 5410
- Производител Infineon
- Наличност: На склад
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2.16 лв.