Каталожен номер: 163582
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SI-N,Switching, Driver, 2 built-in resistors R1-4.7kO,R2-10kO,50V,100mA,300mW,TO-92, ONsemi/Fairchild code:R3305 ,FJN3305RTA
Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors - Pre-Biased
RoHS: Details
Configuration: Single
Transistor Polarity: NPN
Typical Input Resistor: 4.7 kOhms
Typical Resistor Ratio: 0.47
Mounting Style: Through Hole
Package/Case: TO-92-3 Kinked Lead
DC Collector/Base Gain hFE Min: 30
Collector- Emitter Voltage VCEO Max: 50 V
Continuous Collector Current: 0.1 A
Peak DC Collector Current: 100 mA
Pd - Power Dissipation: 300 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: FJN3305R
Packaging: Ammo Pack
DC Current Gain hFE Max: 30
Emitter- Base Voltage VEBO: 10 V
Height: 5.33 mm
Length: 5.2 mm
Type: NPN Epitaxial Silicon Transistor
Width: 4.19 mm
Brand: ON Semiconductor / Fairchild
Product Type: BJTs - Bipolar Transistors - Pre-Biased
Subcategory: Transistors
Unit Weight: 240 mg
Manufacturer: ON Semiconductor
Product Category: Bipolar Transistors - Pre-Biased
RoHS: Details
Configuration: Single
Transistor Polarity: NPN
Typical Input Resistor: 4.7 kOhms
Typical Resistor Ratio: 0.47
Mounting Style: Through Hole
Package/Case: TO-92-3 Kinked Lead
DC Collector/Base Gain hFE Min: 30
Collector- Emitter Voltage VCEO Max: 50 V
Continuous Collector Current: 0.1 A
Peak DC Collector Current: 100 mA
Pd - Power Dissipation: 300 mW
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: FJN3305R
Packaging: Ammo Pack
DC Current Gain hFE Max: 30
Emitter- Base Voltage VEBO: 10 V
Height: 5.33 mm
Length: 5.2 mm
Type: NPN Epitaxial Silicon Transistor
Width: 4.19 mm
Brand: ON Semiconductor / Fairchild
Product Type: BJTs - Bipolar Transistors - Pre-Biased
Subcategory: Transistors
Unit Weight: 240 mg
SI-N,Switching, Driver, 2 built-in resistors R1-4.7kO,R2-10kO,50V,100mA,300mW,TO-92, ONsemi/Fairchild code:R3305 ,FJN3305RTA
- Фабричен номер: FJN 3305 R
- Производител ONS
- Наличност: На склад
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2.00 лв.