Каталожен номер: 176042
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Si-NPN, 40/60V , 200mA , 0.225W,Hfe 30..300,300MHz, SOT-23 ,SMMBT3904LT1G Onsemi
Транзистор: NPN; биполярен; 40V; 200mA; 0,225W; SOT23
Bipolar Transistors - BJT SS GP XSTR SPCL TR ,SOT-23 ,SMMBT3904LT1G Onsemi
Manufacturer: onsemi
Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 300 mV
Maximum DC Collector Current: 200 mA
Pd - Power Dissipation: 300 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Qualification: AEC-Q101
Series: MMBT3904L
Continuous Collector Current: 200 mA
DC Collector/Base Gain hFE Min: 30
DC Current Gain hFE Max: 300
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si
Unit Weight: 39 mg
Транзистор: NPN; биполярен; 40V; 200mA; 0,225W; SOT23
Bipolar Transistors - BJT SS GP XSTR SPCL TR ,SOT-23 ,SMMBT3904LT1G Onsemi
Manufacturer: onsemi
Product Category: Bipolar Transistors - BJT
Mounting Style: SMD/SMT
Package/Case: SOT-23-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 40 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 6 V
Collector-Emitter Saturation Voltage: 300 mV
Maximum DC Collector Current: 200 mA
Pd - Power Dissipation: 300 mW
Gain Bandwidth Product fT: 300 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Qualification: AEC-Q101
Series: MMBT3904L
Continuous Collector Current: 200 mA
DC Collector/Base Gain hFE Min: 30
DC Current Gain hFE Max: 300
Product Type: BJTs - Bipolar Transistors
Subcategory: Transistors
Technology: Si
Unit Weight: 39 mg
Si-NPN, 40/60V , 200mA , 0.225W,Hfe 30..300,300MHz, SOT-23 ,SMMBT3904LT1G Onsemi
- Фабричен номер: SMMBT 3904 LT1G
- Производител ONS
- Наличност: На склад
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0.60 лв.