Каталожен номер: 162106
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Si-P,NF-E,Hi-Fi, 230/230V,15A,150W,30MHz,TO-247S,A1943N Toshiba
Manufacturer: Toshiba
Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package/Case: TO-3P-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: - 230 V
Collector- Base Voltage VCBO: - 230 V
Emitter- Base Voltage VEBO: - 5 V
Collector-Emitter Saturation Voltage: -1.1 V
Maximum DC Collector Current: - 15 A
Gain Bandwidth Product fT: 30 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: 2SA1943N
DC Current Gain hFE Max: 160
Continuous Collector Current: - 15 A
DC Collector/Base Gain hFE Min: 35
Pd - Power Dissipation: 150 W
Unit Weight: 7 g
Manufacturer: Toshiba
Product Category: Bipolar Transistors - BJT
Mounting Style: Through Hole
Package/Case: TO-3P-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: - 230 V
Collector- Base Voltage VCBO: - 230 V
Emitter- Base Voltage VEBO: - 5 V
Collector-Emitter Saturation Voltage: -1.1 V
Maximum DC Collector Current: - 15 A
Gain Bandwidth Product fT: 30 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: 2SA1943N
DC Current Gain hFE Max: 160
Continuous Collector Current: - 15 A
DC Collector/Base Gain hFE Min: 35
Pd - Power Dissipation: 150 W
Unit Weight: 7 g
Si-P,NF-E,Hi-Fi, 230/230V,15A,150W,30MHz,TO-247S,A1943N Toshiba
- Фабричен номер: 2SA 1943 N
- Производител Toshiba
- Наличност: На склад
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4.60€ / 9.00 лв.