DMOS-N-FET,800V,6.6A,56W,<1.9om(4A),TO-220F,FQPF7N80C Fairchild
Manufacturer: ON Semiconductor
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220FP-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 6.6 A
Rds On - Drain-Source Resistance: 1.9 Ohms
Vgs - Gate-Source Voltage: 30 V
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Configuration: Single
Pd - Power Dissipation: 56 W
Channel Mode: Enhancement
Tradename: QFET
Height: 16.07 mm
Length: 10.36 mm
Series: FQPF7N80C
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.9 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance - Min: 5.5 S
Fall Time: 60 ns
Rise Time: 100 ns
Typical Turn-Off Delay Time: 50 ns
Typical Turn-On Delay Time: 35 ns
Unit Weight: 2,270 g