Каталожен номер: 171369
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MOS-N-FET,SMPS, 650V,9A,85/25W,<0.48om(4.5A),TO-220F,STF11N65M5 STMicroelectronics
Cross Reference: 11A65D 11N65D FQPF11N65D MDF11N65D SPA20N60C3 TK11A65DX,IPA65R650CE,STF11N65M5
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - Continuous Drain Current: 9 A
Rds On - Drain-Source Resistance: 480 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 17 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 85 W
Channel Mode: Enhancement
Tradename: MDmesh
Series: Mdmesh M5
Transistor Type: 1 N-Channel
Brand: STMicroelectronics
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 2 g
Cross Reference: 11A65D 11N65D FQPF11N65D MDF11N65D SPA20N60C3 TK11A65DX,IPA65R650CE,STF11N65M5
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - Continuous Drain Current: 9 A
Rds On - Drain-Source Resistance: 480 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 17 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 85 W
Channel Mode: Enhancement
Tradename: MDmesh
Series: Mdmesh M5
Transistor Type: 1 N-Channel
Brand: STMicroelectronics
Product Type: MOSFET
Subcategory: MOSFETs
Unit Weight: 2 g
MOS-N-FET,SMPS, 650V,9A,85/25W,<0.48om(4.5A),TO-220F,STF11N65M5 STMicroelectronics
- Фабричен номер: STF 11N65 M5
- Производител STM
- Наличност: На склад
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4.20 лв.