MOS-N-FET,SuperMESH3 ,SMPS, 650V,10A,35W,<1om(5A),TO-220F,STF10N65K3 STMicroelectronics
Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - Continuous Drain Current: 10 A
Rds On - Drain-Source Resistance: 750 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 42 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 35 W
Channel Mode: Enhancement
Tradename: SuperMesh
Brand: STMicroelectronics
Configuration: Single
Fall Time: 35 ns
Product Type: MOSFET
Rise Time: 14 ns
Series: STF10N65K3
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 44 ns
Typical Turn-On Delay Time: 14.5 ns
Unit Weight: 2 g