V-MOS-N-FET,60V,52A,121W,<0.021om(32.5A),32nS,TO-220,FQP50N06L ON Semiconductor / Fairchild
MOSFET 60V N-Channel QFET Logic Level ,FQP65N06L ON Semiconductor / Fairchild
Manufacturer: ON Semiconductor
Product Category: MOSFET
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 60 V
Id - Continuous Drain Current: 52 A
Rds On - Drain-Source Resistance: 21 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 32 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 121 W
Channel Mode: Enhancement
Tradename: QFET
Configuration: Single
Height: 16.3 mm
Length: 10.67 mm
Series: FQP50N06L
Transistor Type: 1 N-Channel
Type: MOSFET
Width: 4.7 mm
Brand: ON Semiconductor / Fairchild
Forward Transconductance - Min: 40 S
Fall Time: 145 ns
Product Type: MOSFET
Rise Time: 380 ns
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 80 ns
Typical Turn-On Delay Time: 20 ns
Unit Weight: 1,800 g